A Comparative Study on Hot-Carrier Injection in 5-Story Vertically Integrated Inversion-Mode and Junctionless-Mode Gate-All-Around MOSFETs

The hot-carrier degradation of the junctionless mode (JM) and the inversion mode (IM) of five-story vertically integrated gate-all-around (GAA) MOSFETs is investigated for the first time. It is found that the degradation of drain current induced by the hot-carrier injection (HCI) in the JM-FET is less than that in the IM-FET for the same dimensions and bias conditions, because of the bulk conduction mechanism of the JM-FET, which is in contrast to surface conduction of the IM-FET. The results are obtained using electrical measurements and numerical simulations. The analysis of how HCI affects the lifetime reliability of vertically integrated GAA MOSFETs is of great importance for ultimate scaling of the silicon transistor.