Improvement of Current Blocking for III-Nitride Based LEDs by Treatments of Arplasma on p-GaN Surface

We successfully demonstrated that the Ar plasmadamaged p-GaN surface increased the resistance of ITO/P-GaN contact serving as injection current deflection layer under the electrode pad. It was found that both of the Vf at 20mA were approximately 3.3V. Under a 20 mA current injection, it was found that output powers were 9.8 and 11.08 mW for conventional LEDs and LEDs with Ar plasma damaged p-GaN surfaces respectively. We can increase the LED output power by 13% by inserting the p-GaN surface damaged by Ar plasma under the electrode pad. It was also found that after testing 72 hours, the half lifetimes of conventional LEDs and LEDs with Ar plasma damaged p-GaN surface were about 49% and 55% of the initial intensity, respectively.