High power light beam coupling semiconductor laser

The invention relates to a high-power semiconductor laser device, especially a high-power light beam coupling semiconductor laser device, including two semiconductor laser devices with same wavelength and polarization state, a beam-expanding focusing device. The two semiconductor laser devices are deposited relatively on an optical axis, a right-angle polarization coupling prism with polarization membranous on its inclined surface is arranged on an optical path between the two semiconductor laser devices, a quarter wave plate is pasted on one right-angle surface of the right-angle polarization coupling prism, an emergent light beam of the laser is transmitted to the beam-expanding focusing device after reflecting by the right-angle polarization coupling prism, and the emergent light beam of the other laser is coupled to a beam to transmit after 90 DEG rotation of polarization direction by reflecting of the quarter wave plate. The paste placement of the quarter wave plate and the right-angle polarization coupling prism, and reduces device regulation difficulty and improves coupling efficiency, also improves the output power and lightness by two times without changing light beam quality.