NMR and ESR Studies on a-Si:H Prepared by Glow Discharge Decomposition of Si2H6

A hydrogen incorporation scheme and the density of defects are investigated by means of NMR and ESR for hydrogenated amorphous Si films prepared by glow discharge decomposition of disilane gas. Both the high rf power of decomposition and the high substrate temperature bring the films with a low density of defects, because in these films the content of dispersed hydrogen effective for relaxing the structural strain is large in spite of the small total hydrogen content.