Modeling Conductance Cutoff of GaN, AlN and InN at High-frequency Region

At the article new approach of cutoff estimation by Fourier spectrum pulse response at high-frequency region with an approximation for drift speed of III-Nitride semiconductor materials — (Al, In, Ga)N is investigated. The frequency-domain limits of negative dynamic conductance are compared with resulting cutoff frequencies for III-Nitrides. The advantage of III-Nitrides in terms of frequency characteristics and features of each of the representatives of the group are demonstrated. From a methodological point of view proposed approach is based on the solving of the differential equation system. System consists of relaxation expressions for energy, impulse and carrier concentration. For various types of scattering are taken into account specific relaxation times.