InGaAs/InP strained layer quantum wells grown by molecular beam epitaxy

Abstract Different heterostructures containing InGaAs/InP quantum wells, separate confinement heterostructures and superlattices are grown by molecular beam epitaxy on InP substrates. These layers are grown in tensile and compressive strain and their luminescence emission wavelength is kept around 1550 nm. The growth parameters (temperature, substrate quality) are found to be of prime importance to obtain high quality materials.