Injection locking of diode lasers to frequency modulated source

Abstract We present a laser system which in a simple way generates two Raman beams for a velocity selection or cooling experiment. A narrow-band diode laser is frequency modulated by an electro-optical device. Two slave diodes are injection locked to the carrier and sideband frequencies, providing two powerful (130 mW) beams offset by 9.2 GHz. The stability of the frequency offset (limited by the rf source) has been demonstrated in a Raman velocity selection experiment. By changing the operating conditions of the slave laser we can switch its output frequency (