Current-access magnetic bubble circuits

Experimental and theoretical results from our work on current-access technology show promise for high-density, ∼10 7 bits/cm 2 , and high-frequency, f 3 (FeGe) 5 O 12 , (LaLuSmCa) 3 (FeGe) 5 O 12 , and (LaLuSm) 3 (FeGa) 5 O 12 , the last appears best suited; some room temperature characteristics of the composition La 0.6 LU 2.1 Sm 0.3 Ga 0.9 Fe 4.1 O 12 are 4μMM, = 470G, μ = 750 cmS −1 . Oe −1 , d = 1.6 μm, and ΔH c = 2 Oe across a bubble for the threshold of motion. Necessary improvements in processing were made with a radio-frequency, chlorine-containing plasma etch which produced metal patterns identical to those of the etch mask. We anticipate that current-access devices, when compared to conventional field-access devices, will achieve higher data rates, lower power consumption per bit, and greater storage densities with existing processing technologies.