Growth mechanism of one-step self-masking reactive-ion-etching (RIE) broadband antireflective and superhydrophilic structures induced by metal nanodots on fused silica

This work presents a low-cost, simple, convenient, advanced technology to prepare large-area defect-free subwavelength structures (SWSs). SWSs were obtained by a metal-induced one-step self-masking RIE process on a fused-silica surface, in which metal-fluoride (mainly ferrous-fluoride) nanodots were used to induce and gather stable fluorocarbon polymer etching inhibitors in the RIE polymers as masks. The SWS growth processes are visible with an increase in etching time and some exhibit prominent broadband antireflective properties from the visible to the near-infrared wavelength range. Transmission in the 600-900-nm range increased from approximately 93% for the polished fused silica to above 99% for the double-side SWSs on fused silica. A theoretical simulation by a finite-difference time-domain method agreed well with the experiments. Moreover, the surface of the SWSs exhibits excellent superhydrophilic properties.