Single transverse mode operation of GaN-based vertical-cavity surface-emitting laser with monolithically incorporated curved mirror

We report single transverse mode operation of a blue GaN-based vertical-cavity surface-emitting laser (GaN-VCSEL) with a monolithically incorporated curved mirror. For a device with a 4 μm current aperture diameter and a curved mirror with a radius of curvature (ROC) of 51 μm, single transverse mode operation was confirmed up to an output power of 3.2 mW under continuous wave operation at 20 °C. For a device with a smaller ROC of 31 μm, multi transverse mode operation was confirmed, indicating that the transverse mode can be controlled by the cavity design of such GaN-VCSELs.