Optimization of CIGS-Based PV Device through Antimony Doping
2010
This communication discusses grain size enhancement in CIGS thin films induced by Sb-doping and demonstrates consequent photovoltaic (PV) device performance improvement in CIGS-based solar cells. The chemical-doping approach also shows promise in enabling low-temperature (≤ 400°C) processing of CIGS-based PV technology.
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