An 80 nm In 0.7 Ga 0.3 As MHEMT with flip-chip packaging for W-band low noise applications

The fabrication process of an 80 nm In 0.7 Ga 0.3 As MHEMT device with flip-chip packaging on Al 2 O 3 substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high I DS = 425 mA/mm and high g m = 970 mS/mm at V DS = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NF min )below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In 0.7 Ga 0.3 As MHEMT device for low noise applications at W-band.