Computer simulation of mechanisms of the SIMOX process

Abstract Synthesis of buried SiO 2 layers by high dose ion implantation into silicon and subsequent annealing is a well developed technique available for a wide range of applications. However, the fundamental understanding of Ion Beam Synthesis is still on a low level. Here we present results of a computer simulation of the Ostwald ripening during the annealing step. It is shown that (i) starting from a Gaussian-shaped (as-implanted) precipitate distribution a substructure of layers of precipitates can develop which is similar to experimentally observed precipitate bands and (ii) the distance between these bands - called structure wavelength - depends linearly on the diffusional screening length with a proportionality factor which is close to π.