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Development of 1.55μm-excited high-intensity THz radiation using InGaSb / InAs heterostructures
Development of 1.55μm-excited high-intensity THz radiation using InGaSb / InAs heterostructures
2020
Daichi Shimada
Keywords:
Optoelectronics
high intensity
Heterojunction
Materials science
Terahertz radiation
Radiation
Excited state
thz radiation
Correction
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