Investigation of the structure of (p)3C-SiC-(n)6H-SiC heterojunctions
2001
The structure of (p)3C-SiC-(n)6H-SiC epitaxial structures obtained by sublimation epitaxy in vacuum on 6H-SiC substrates was studied by methods of X-ray topography, X-ray diffraction, and transmission electron microscopy. The results showed high structure perfection in the epitaxial layers of both SiC polytypes with a sharp interface between the 3C-SiC and 6H-SiC layers.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
4
References
13
Citations
NaN
KQI