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Capacitance characterization of silicon nanowires formed by cryogenic dry etching
Capacitance characterization of silicon nanowires formed by cryogenic dry etching
2020
Artem Baranov
Dmitry A. Kudryashov
L N Dvoretckaia
I. A. Morozov
A. V. Uvarov
E A Vyacheslavova
K. Yu. Shugurov
A. S. Gudovskikh
Keywords:
Optoelectronics
Capacitance
Dry etching
Materials science
silicon nanowires
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