Low-Voltage Depletion-Load Inverter Using Solid-State Electrolyte Gated Oxide Transistors

A low-voltage depletion-load inverter consisting of oxide transistors gated by nanogranular phosphorosilicate glass electrolytes has been fabricated. An indium-zinc–oxide electric-double-layer (EDL) transistor shows a threshold voltage ( $V_{\mathrm {th}}$ ) of approximately −0.1 V and acts as a load. An indium-gallium–zinc-oxide EDL transistor shows a $V_{\mathrm {th}}$ of $\sim 0.3$ V and acts as a driver. The depletion-load inverter shows a high voltage gain of $>40$ and a narrow transition width of $ V at low supply voltage of 2 V. The proposed low-voltage inverter may find potential applications in portable electronics and biosensors.