Source modulation technique applied to enhance the Short-Circuit robustness of a PT-IGBT

This work presents an optimum PT-IGBT design aimed to enhance the short-circuit (SC) capability. For the first time, the SC robustness of a 600V Trench PT-IGBT with Source striped geometry is deeply analyzed using a calibrated 3D electro-thermal TCAD simulation procedure and experimental measurements. In order to improve the device SCSOA the influence of the Source modulation percentage and the introduction of a shallow recessed Body contact is analyzed. Results show that a careful design of the Source region is mandatory to prevent a premature thermally-induced latch-up, even if the saturation current is reduced with the modulation technique.