Old Web
English
Sign In
Acemap
>
Paper
>
Effect of Annealing Temperature on Ferroelectric Properties of ALD Deposited TiN/Hzo/TiN Capacitor
Effect of Annealing Temperature on Ferroelectric Properties of ALD Deposited TiN/Hzo/TiN Capacitor
2021
Yan-Kui Liang
Jing-Wei Lin
Jui Sheng Wu
Chun-Jung Su
Edward Yi Chang
Chun-Hsiung Lin
Keywords:
Optoelectronics
Tin
Capacitor
Ferroelectricity
Annealing (metallurgy)
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]