Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test

In this paper, leakage current signatures in AlGaN HEMT are studied after storage at 300 °C. Electrical characterization of the gate to source diode as a function of the temperature has been performed on HEMT with two different gate pad topologies, but it has not allowed identifying significant difference in the electron transport mechanisms. In forward and low reverse bias, the preeminent conduction mechanism can be attributed to thermionic field emission (TFE). By localized FIB cuts, Optical Beam Induced Resistance Change (OBIRCh) analysis was used to localize current path. Results tend to indicate that mechanical stresses in the gate structure strongly influences the leakage current of the transistor. The OBIRCh analysis technique, widely used in silicon technology, appears to be a very efficient tool to localize leakage paths, in particular for HEMT topology with source terminated field plate.