Directional Process Method of AgGa_(1-x)In_xSe_2 Crystal

A new method about a sort of directional processing of AgGa1-xInxSe2 crystal was presented. Based on the cleavage planes of AgGa1-xInxSe2 single crystal combined with standard pole figure and the X-ray diffraction,light pass surface of the device can be quickly obtained by this new method. Using this method,then via directional cutting,grinding and polishing,the initial optical parametric oscillators (OPO) devices of AgGa1-xInxSe2 (x=0.2) crystals grown by improved vertical Bridgman method through spontaneous nucleation have been fabricated. Its phase-matched angle θm=54.71°,azimuth angle φ=45°,and the device size is 8 mm×8 mm×18 mm. This method was simple operation and high accuracy,and also can be applied to the directional process of other AgGa1-xInxSe2 crystals with different indium contents.