Integration of thin film resonator devices onto SiGe substrates

Bulk acoustic wave resonators and filters have been fabricated over the frequency range from 300 MHz to over 12 GHz. At higher frequencies, it is sometimes desirable to have resonators and filters integrated into the active device substrate. Full integration allows shorter lead lengths and reduced parasitics for filters and resonators used to control oscillator frequency. This paper reports on the initial results of a project to integrate thin film resonators and filters on semiconductor IC substrates, principally SiGe, and the issues associated with full integration.