Simulation of XSTS Imaging of Self-Assembled Quantum Dot Electronic States

Recently, STM measurements of cleaved, self assembled quantum dots (SAQDs) have provided important information on the morphology and composition of these buried semiconductor islands. It is also now becoming possible to use STM techniques to image the electronic charge density within the SAQDs. At low bias voltages, the tunnelling current measured during cross‐sectional scanning tunnelling spectroscopy (XSTS) experiments contains direct information on the 0D bound electronic states of the cleaved quantum dots. In this paper we present a numerical simulation of an XSTS experiment. The calculated tunnelling currents between an STM tip and the bound states inside a physically realistic model of a cleaved SAQD are compared to experimental results and qualitative agreement is found. The calculation of the tunnelling current is split into two stages. First the bound electron states of the cleaved quantum dot are calculated by exact diagonalisation of the Hamiltonian in a simple harmonic oscillator basis set. Th...