Growth of InAsPSb/InAs Heterostructures

In(As1-x-yPxSby) is one of the most attractive III-V compound for optical sources with wavelength in the range 2-4µm. Liquid phase epitaxy of this quaternary alloy lattice-matched to InAs substrates was studied. Growth of a high band gap confinement layer, limited by the presence of an immiscibility domain, was optimized from phase diagram calculations. In(AsPSb)/InAs/In(AsPSb) heterostructures, which give the best confinement of the active layer and the longer emission wavelength of this system, were successfully grown.