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Low Damage SiN x Surface Passivation using Remote ICP-CVD for AlGaN/GaN HEMTs
Low Damage SiN x Surface Passivation using Remote ICP-CVD for AlGaN/GaN HEMTs
2008
H.J. Cho
Jin-Cherl Her
K. I. Lee
H.-Y. Cha
K.S. Seo
Keywords:
Analytical chemistry
Passivation
Optoelectronics
Materials science
algan gan
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