Time-resolved temperature measurement and numerical simulation of superposed pulsed Nd:YAG laser irradiated silicon

Time-resolved surface temperature of single crystal silicon was measured by an infrared radiation pyrometer. The silicon sample was irradiated by two pulsed Nd:YAG lasers with pulse duration of 1ms superposed by 7ns pulses, referred to as combined pulse laser (CPL). The change of the damage radius with the millisecond (ms) laser energy density was studied, and then compared with that of single ms laser irradiation. An axisymmetric numerical model was established for calculation of the temperature field distribution while silicon was irradiated by single ms laser and CPL, respectively. Compared with experimental results, the CPL-silicon damage mechanism was discussed.