Pseudo-van der Waals Epitaxy of MoS2 on Patterned and Planar GaN Substrates

n-MoS2/p-GaN diodes monolithically formed by pseudo-van der Waals epitaxy show well-defined rectifying behavior. Growth on patterned GaN substrates yields monolayer and few-layer MoS2 formation on the planar surface and the pyramids, respectively.