Modeling of Schottky barrier diode millimeter-wave multipliers at cryogenic temperatures

We report on the evaluation of Schottky barrier diode GaAs multipliers at cryogenic temperatures. A GaAs Schottky barrier diode model is developed for theoretical estimation of doubler performance. The model is used to predict efficiency of doublers from room to cryogenic temperatures. The theoretical estimation is verified experimentally using a 78 GHz doubler cooled down to 14 K. The observed efficiency improvement due to cooling is approximately 4 % per 100 degrees.