The growth of ice clusters on the Si(100)(2 × 1)-H(D) surface: Electron energy loss spectroscopy and thermal desorption studies

Abstract The growth of ice clusters on the Si(100)(2 × 1)-H surface has been investigated mainly by the use of high-resolution electron energy loss spectroscopy and thermal desorption spectroscopy. At 90 K, H 2 O molecules are adsorbed on the (2 × 1)-H surface to form ice clusters by the hydrogen-bonding interaction. Four H 2 O peaks are observed at 165, 185, 215 and 270 K in the thermal desorption spectra for the ice-covered surface. The peaks at 165 and 185 K correspond to the ice clusters and the peaks at 215 and 270 K to the strongly-bound H 2 O species which play a role as the nucleation centers of the ice clusters desorbing as H 2 O at 185 and 165 K, respectively.