Method for growing p-type transparent and conducting Ni1-xMgxO crystal film by doping Li

The invention relates to a method for growing p-type transparent and conducting Ni1-xMgxO crystal film by doping Li, comprising the following steps: adopting pulse laser deposition method for compression and high-temperature sintering after ball milling and mixing NiO, MgO and Li2CO3 powders so as to manufacture Li-doped Ni1-xMgxO ceramic target; placing the ceramic target and a substrate in a pulse laser deposition device; adjusting the distance between the target and the substrate; growing at proper substrate temperature under proper oxygen pressure intensity and laser frequency; and then cooling till room temperature so as to obtain the Li-doped Ni1-xMgxO crystal film. The crystal film prepared by the method is p-type conducting, and has the excellent characteristics of being low in electrical resistivity, high in transmissivity, high in carrier mobility, continuously adjustable in band gap, and the like; and the method is simple, real-time doping is realized, the doping concentration is controlled by adjusting the growth temperature and the contents of Li and Mg in the target, and the obtained film has wide application prospect in the fields of transparent electronic devices, photoelectronic devices and the like.