Continuous-wave operation of extremely low-threshold GaAs/AlGaAs broad-area injection lasers on (100) Si substrates at room temperature.

Room-temperature continuous-wave operation of large-area (120 μm X 980 μm) GaAs/AlGaAs graded-refractive-index separate-confinement heterostructure lasers on (100) Si substrates has been obtained. Minimum threshold-current densities of 214 A/cm2 (1900-μm cavity length), maximum slope efficiencies of about 0.8 W/A (600-μm cavity length), and optical power in excess of 270 mW/facet (900-μm cavity length) have been observed under pulsed conditions.