Reduction in Background Carrier Concentration for 4 H -SiC C-face Epitaxial Growth

Reduction in background carrier concentration has been investigated for 4 H -SiC C-face epitaxial growth in order to be applied for ultra-high voltage power devices. Optimizing epitaxial growth parameters made it possible to achieve 7.6x10 13 cm -3 as the background carrier concentration within a whole area of specular 3-inch wafers. In addition to the background carrier concentration reduction, epitaxial film thickness variation, surface defect density and the carrier lifetime have been confirmed to fulfill the requirements for the devices.