Plasma Parameter and Film Quality in the ECR-Plasma-CVD

New DC bias method for the electron cyclotron resonance (ECR) plasma chemical vapor deposition (CVD) is demonstrated, where the highly photosensitive a-Si:H film of the device grade is deposited on the dielectric substrate. The measurement of plasma parameters using a probe technique indicates that the impinging of ion H+ on the growing surface is the key to the high quality a-Si:H film and this DC bias method controls the film properties by the ion density rather than the ion energy.