1.3 mu m wavelength, low-threshold strained quantum well laser on p-type substrate

The authors fabricated 1.3 mu m wavelength strained quantum well lasers on a p-type substrate. Extremely low threshold currents (1.0 mA at 20 degrees C, 3.5 mA at 80 degrees C) were obtained with the optimised structure. 1 Gbit/s modulation was demonstrated at close to zero bias with an eye opening of 62%. >