ELECTRICAL CHARACTERISTICS AND CARRIER LIFETIME MEASUREMENTS IN HIGH VOLTAGE 4H-SIC PIN DIODES

The key material and device parameters governing the electrical performance of high voltage 4H-SiCPiN diodes have been investigated using experimental results and numerical simulations. Reverse recovery characteristics show an increase in both carrier lifetime and anode injection efficiency at elevated temperature. Open circuit voltage decay measurements are used to estimate carrier lifetimes (τ≈0.6μs at T=25°C increasing to τ≈2μs at T=225°C) that are comparable to values measured on starting material prior to fabrication using micro-wave photoconductivity decay techniques.