Growth and characterization of undoped ZnSe epitaxial layers obtained by organometallic chemical vapour deposition

Abstract Epitaxial ZnSe layers have been grown on GaAs substrates by the metal alkyl hydride technique. First we describe the design of the reactor geometry necessary in order to obtain constant thickness layers. Then the influence of the experimental conditions (gas flows, vapour composition, temperature, substrate orientation) on the growth kinetics and on the crystalline and luminescent properties is described. The results obtained from this work allow us to determine the growth conditions, the different growth processes involved and the origin of contamination. After parameter optimization this method provides low temperature undoped ZnSe epilayers with the same luminescent properties as high purity bulk samples.