Iii Nitride Crystal, crystal growth method and the crystal growth apparatus

Upon growing the Group III nitride crystal in a pressurized atmosphere of a group III element and nitrogen and the nitrogen-containing gas from at least comprising melt 50 an alkali metal or alkaline earth metal, the melt holding vessel that holds the melt 50 two axes directions are different from each other 160, for example X-axis, pivoting around the Y axis. Thus, stirring to flow at a flow rate sufficient to melt 50 over the entire interface between the container bottom (or seed crystals) is possible, it becomes possible to grow a crystal having less crystal inside the macro defects. Further, it is possible to make a uniform flow of the melt 50 over the melt holding vessel 160, it is possible to reduce the macro defects Thereby, nonuniformity of the crystal thickness is small, excellent in-plane uniformity crystals it is possible to grow.