Ultraviolet light-emitting diode chip with reflection ohmic contact electrode

The invention relates to an ultraviolet light-emitting diode chip with a reflection ohmic contact electrode. The ultraviolet light-emitting diode chip comprises a substrate, an AlN template layer, an N-type AlGaN layer, a multiquantum-well active region, an electronic barrier layer, a P-type transition layer, a P-type contact layer and the reflection ohmic contact electrode, wherein the AlN template layer grows on the substrate; the N-type AlGaN layer grows on the AlN template layer; the multiquantum-well active region grows on the N-type AlGaN layer; the electronic barrier layer grows on the multiquantum-well active region; the P-type transition layer grows on the electronic barrier layer; the P-type contact layer grows on the P-type transition layer; and the reflection ohmic contact electrode is made on the P-type contact layer. An ultraviolet light-emitting diode prepared from the chip has the light emitting wavelength range of 200nm to 365nm. The chip has high ultraviolet reflectivity, so that the light extraction efficiency of the ultraviolet light-emitting diode is improved.