Effect of B2O3 addition on the sintering temperature and microwave dielectric properties of Zn2SiO4 ceramics

Abstract B 2 O 3 (25.0 mol%) was added to Zn 2− x SiO 4− x ceramics (0.0 ≤  x  ≤ 0.5) to decrease the sintering temperature. Specimens with 0.0 ≤  x  ≤ 0.3 sintered at 900 °C were well sintered with a high density due to the formation of a B 2 O 3 or B 2 O 3 –SiO 2 liquid phase. The Q  ×  f value of the Zn 2 SiO 4 ceramic was relatively low, 32,000 GHz, most likely due to the presence of a ZnO second phase. A maximum Q  ×  f value of 70,000 GHz was obtained for the specimens with x  = 0.2–0.3, and their ɛ r and τ f values were approximately 6.0 and −21.9 ppm/°C, respectively. Ag metal did not interact with the 25.0 mol% B 2 O 3 -added Zn 1.8 SiO 3.8 ceramic, indicating that Zn 2− x SiO 4− x ceramics containing B 2 O 3 are a good candidate materials for low temperature co-fired ceramic devices.