A sapphire based monolithic integrated optrode

A novel kind of optrode fabricated on a sapphire substrate is proposed for optogenetic applications in neuroscience. Eight thin-film neural electrodes and a GaN-LED are monolithically integrated on the surface of a sapphire shank. The LED is used for optogenetic stimulation and the multiple electrodes are used for simultaneous recording of neural activities. The output power density of the LED is 1–19 mW/mm 2 at 468 nm, driving with a current from 0.7–10 mA. The mean electrochemical impedance of the eight recoding sites on the optrode at 1 kHz is 385 kΩ. The highest temperature-raise at tissue around the LED is almost 1 °C when the output power density is 3 mw/mm 2 . The monolithic integrated structure will make it a powerful tool for optogenetics.