CMOS process transient noise simulation analysis and benchmarking

Advanced analysis on transient noise simulation was performed and the limitations on estimating accurately MOSFET noise performance were identified. The signal processing theory defining transient noise was examined and SPECTRE based simulation benchmark tests using an RF 65 nm CMOS process available by TSMC, were performed on flicker, thermal and gate induced CMOS noise performance, validating transient noise results versus AC noise and tracking and facing inaccuracies on noise sources simulation that increase with frequency. In addition, all the parameters affecting the obtained accuracy were defined. The differentiations of time domain noise simulation results were demonstrated and guidelines on how to modify each parameter in relation to the application were provided.