Charge redistribution in a charge storage layer containing C60 molecules and organic polymers for long electron retention

A gate stack structure with an organic-polymer tunneling gate insulator on a C60-containing organic-polymer layer was developed for use as nonvolatile flash memory. Examination of the memory characteristics revealed substantial flatband voltage shifts for both electron and hole injections into C60 molecules. A long retention time was obtained for electron injection. Charge redistribution phenomena were observed in the electron retention characteristics immediately after the bias application was terminated. This proposed stack structure of organic polymers opens the door to the development of inexpensive electronic memories.