Surface orientation effect on photoelectrochemical etching in n-type InP

Abstract The effect of surface orientation on photoelectrochemical etching in n-type InP is studied. The (111) planes are of special interest because of their surface composition, only consisting of group III atoms (111) or of group V atoms (111). A comparison with etching of the (100) face with acidic solution has shown the great dependence on etching morphology with P or In atom quantities. Following the different reactivities of group III and group V atoms, the etching seems to be always initiated by oxidizing of P atoms. These are directly apparent on the (100) and (111) faces and become apparent in surface defects on the (111) face.