Structure of interfaces in a-Si:H/a-Si3N4:H multilayers produced by plasma CVD

Abstract In a-Si:H/a-Si 3 N 4 :H multilayers produced by a plasma CVD, the gradients of the electron density exist at the interfaces over distances of ∼11 A and ∼7 A which come from the distribution of the density of N atoms formed when a-Si 3 N 4 :H is deposited onto a-Si:H and from the localization of SiH 2 bonds formed when a-Si:H is deposited, respectively. The case prepared using a plasma nitriding process is also investigated.