A method and apparatus for producing a field effect transistor

The present invention relates to a method and apparatus for producing a field effect transistor. It describes a method for manufacturing a double epitaxial fin FET. The method comprises adding to the material a first epitaxial fin array. The method also includes using at least a first portion of a first masking material covers the array, and the fins from the fin array portion of the uncovered first removing epitaxial material. The method comprises adding to a second portion of the epitaxial material uncovered fin array of fins. The method also includes the use of a second masking material covers a second portion of the fin array, and using the first masking material and etching the second masking material is oriented. Also describes an apparatus and computer program product.