Photoluminescence, Raman Scattering and Rbs/Channeling of Epitaxial Fluorides
1985
Growth conditions are described for producing high quality crystalline films of CaF 2 on (100) and (111) GaAs and LaF 3 , CeF 3 and NdF 3 on (111) Si. Rutherford backscattering/channeling, low temperature (
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