Preparation method of silylene material

The invention discloses a preparation method of a silylene material. The preparation method comprises the following steps of 1) evaporating and depositing a proper amount of semiconductor material silicons to a transitional metal substrate, the transitional metal substrate being (111) surface of iridium; and 2) annealing the whole sample so that the silicons covering the substrate surface are interacted with each other; forming a two-dimensional orderly film-shaped structure which is configured as hexagonal cellular, thereby obtaining the silyene material. The novel material is similar to graphene and obtains wide application potential in the future development and research aspect of information electronics and devices.