Realization of storage and synaptic simulation behaviors based on different forming modes

By varying the forming process to a constant voltage sampling forming mode, the Pt/GeTeO x /TiN memory device exhibited analog properties, and continuous multilevel conductance states were obtained through applying appropriate pulse sequences. These characteristics were exploited to demonstrate spike-timing-dependent plasticity learning, indicating that the device had great potential not only in non-volatile digital systems but also in neuromorphic computing systems. Moreover, the conduction mechanism of the device with different forming modes was investigated.