Statistical analysis of CBRAM endurance
2018
In this paper, we address endurance reliability of resistive RAM at array level. To this aim, Al 2 O 3 based Conductive Bridging RAM (CBRAM) kb arrays are studied. Maximum number of cycles the memory can sustain is statistically analyzed. Impact of SET and RESET conditions and Al 2 O 3 thickness on endurance distributions is discussed. Finally, gradual endurance degradation mechanism is discussed along with defect generation in the resistive layer.
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