Characterization of CuInTe2 thin films prepared by pulsed laser deposition

Abstract In this paper initial results are presented for the growth and characterization of CuInTe 2 thin films prepared by pulsed laser deposition (PLD) using Nd:YAG laser and XeCl excimer laser. The films were analyzed using X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX) and Rutherford back scattering (RBS) measurements. The composition of the target material was largely maintained in the films. This suggests that PLD could be used as a technique for the fabrication of ternary semiconductor films. Electrical measurements indicated p-type conductivity with surface resistivity values in the range of 10 −1 –10 −2 Ω cm. The films had a high optical absorption of about 104 cm −1 and a band gap of 0.96 eV.